Scalable room temperature quantum information processor

A quantum information processor having a scalable architecture, comprising:

• an array of super-plaquettes, each super-plaquette containing a two dimensional lattice of plaquettes that are coupled to each other through dark spin chains;
• wherein each plaquette includes a single quantum register containing at least one nuclear spin and at least one electronic spin;
• wherein each super-plaquette is separately controllable by confined microwave fields thereby allowing for parallel and fault-tolerant operations at the super-plaquette level;
• wherein each one of the quantum registers occupies an individual row within each plaquette in the super-plaquette, thereby forming a staggered structure that allows for individual spectroscopic addressing of each single quantum register;
• and wherein quantum information is movable between the boundaries of different super-plaquettes within the array of super-plaquettes via localized microwave fields of a dual super-plaquette lattice.

A method of fabricating a quantum information processor capable of performing qubit operations in parallel at room temperature, the method comprising:

• creating a plurality of NV centers in a diamond lattice;
• and generating within the diamond lattice nitrogen ion impurities so as to generate a dark spin chain configured to couple individual NV centers with each other;
• wherein the quantum information processor comprises an array of super-plaquettes, each super-plaquette containing a two dimensional lattice of plaquettes that are coupled to each other through dark spin chains;
• wherein each plaquette is individually optically addressable and includes a single NV center containing at least one nuclear spin and at least one electronic spin;
• wherein each super-plaquette is separately controllable by confined microwave fields thereby allowing for parallel and fault-tolerant operations at the super-plaquette level;
• and
• wherein the act of generating the nitrogen ion impurities comprises:
• specifying an individual implantation row within each plaquette;
• implanting and subsequently annealing single nitrogen ion impurities within the specified implantation row;
• for each row of plaquettes within the super-plaquette, repeating the acts of implanting and annealing single impurities, so as to create an array of NV centers that each occupy an individual row in the super-plaquette.