Secure erase of data in electronic device
OwnerJack Winters, Haining Faninventors
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Abstract
A method of secure erase of an electronic device that applies a predetermined voltage to a device. The voltage is selected to be high enough to quickly destroy all data cells of the electronic device, but not high enough to destroy lines to the data cells of the electronic device. Accordingly, since the voltage is too low to destroy the word or bit lines, the predetermined voltage is applied to every data cell using the word or bit lines such that all data is removed. The present invention has the advantage of quickly, reliably, and permanently removing all of the data from the electronic device. The predetermined high voltage can differ for different types of SSDs.
Claims17
A method of erasing of data stored in memory cells in an electronic device comprising the steps of:
- selecting a predetermined voltage;
- triggering application of the predetermined voltage;
- and
- applying the predetermined voltage to the electronic device, the electronic device is a solid state drive (SSD) comprising a plurality of NAND cells using common word and bit lines
- wherein the predetermined voltage is selected to be high enough to destroy all the NAND cells of the electronic device and low enough to keep the word and bit lines to the NAND cells intact and is in a range from 3.3V to 84V and wherein the application of the voltage destroys the NAND cells and keeps the word and bit lines intact.
A system of erasing of data stored in memory cells in an electronic device comprising:
- means for triggering application of a predetermined voltage manually or automatically;
- and
- means for applying the predetermined voltage to the electronic device, the electronic device is a solid state drive (SSD) comprising a plurality of NAND cells using common word and bit lines
- wherein the predetermined voltage is selected to be high enough to destroy all the NAND cells containing the data of the electronic device and low enough to keep the word and bit lines to the NAND cells intact and wherein the predetermined voltage is in a range from 3.3V to 84V and wherein the application of the voltage destroys the NAND cells and keeps the word and bit lines intact.
Dependencies are inferred from the claim text.