Back to results
US 9,316,912 B2Granted
Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
AssigneeFUJIFILM Corporation
InventorsHiromi Kobayashi, Haruki Inabe
Life of this patent
Estimating the term…
Abstract
A positive type resist composition for use in liquid immersion exposure comprises: (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms; and (D) a solvent.
Claims16
A resist composition for ArF exposure, comprising:
- (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid;
- (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation;
- (C) a resin containing an alkyl group having 2 or more carbon atoms;
- and
- (D) a solvent,
- wherein the structure of resin (A) and the structure of resin (C) are not in the same compound,
- a content of the resin (C) is 1 to 10 mass % on the basis of the total solid content of the resist composition,
- the resin (C) contains an alkali soluble group, and
- the resin (C) contains a fluorine atom.
6 more elements
Dependencies are inferred from the claim text.