Continuous evanescent perturbation gratings in a silicon photonic device

Abstract

A method of fabricating a silicon photonic device and a system including a silicon photonic device are described. The method includes forming a photoresist layer on a silicon layer and patterning a mask formed on the photoresist layer. The patterning defines a primary optical waveguide region, a first evanescent perturbation grating region on a first side of the primary optical waveguide region and a second evanescent perturbation grating region on a second side, opposite the first side, of the primary optical waveguide. The first evanescent perturbation grating region and the second evanescent perturbation grating region are defined as continuous regions along a length of the silicon photonic device. The method also includes etching the photoresist layer and the silicon layer according to a pattern of the patterned mask.

Dependencies are inferred from the claim text.