Integration of an unprocessed, direct-bandgap chip into a silicon photonic device

A method of fabricating a composite device for splitting photonic functions between two or more materials, the method comprising:

• aligning a first mask with a target;
• etching a recess in a platform based on the first mask aligned with the target;
• bonding a chip to the platform, wherein:
• the chip is bonded in the recess of the platform;
• a gap separates a side of the chip and a wall of the recess;
• and
• the chip bonded to the platform forms the composite device;
• applying a contact metal on top of the chip;
• at least partially covering both the platform and the chip with a first material, thus filling the gap;
• applying a second mask that defines an area to etch over the gap;
• partially removing first material in the gap based on the second mask defining the area to etch over the gap;
• at least partially filling the gap with a second material;
• removing a portion of the second material from the gap;
• at least partially covering both the platform and the chip with a third material;
• applying a third mask to define an area to remove from the chip to form a feature on the chip;
• removing material from the chip to form the feature on the chip;
• and
• covering the chip with a fourth material.