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US 9,316,771 B2Granted
Etching process, method of manufacturing electronic device, and method of manufacturing polarizing plate
AssigneeSony Corporation
InventorsMasahiro Kaida, Yuu Kawaguchi
Life of this patent
Estimating the term…
Abstract
An etching process includes: forming a metal film on a substrate having a pattern formation region; forming a mask having a predetermined pattern on the metal film in the pattern formation region, and forming a resist film in part or all of a periphery of the pattern formation region; and dry-etching the metal film in the pattern formation region.
Claims15
An etching process, comprising:
- forming a metal film on a substrate having a pattern formation region;
- forming a mask having a predetermined pattern on the metal film in the pattern formation region, and forming a resist film in part or all of a periphery of the pattern formation region;
- and
- dry-etching the metal film in the pattern formation region,
- wherein forming the resist film in part or all of the periphery of the pattern formation region comprises forming the resist film such that the resist film circumferentially encloses the pattern formation region.
2 more elements
A method of manufacturing an electronic device, comprising:
- forming a metal film on a substrate having a wiring formation region;
- forming a mask having a predetermined pattern on the metal film in the wiring formation region, and forming a resist film in part or all of a periphery of the wiring formation region;
- and
- dry-etching the metal film in the wiring formation region to form a wiring pattern,
- wherein forming the resist film in part or all of the periphery of the wiring formation region comprises forming the resist film such that the resist film circumferentially encloses the wiring formation region.
2 more elements
A method of manufacturing a polarizing plate, comprising:
- forming a metal film on a substrate having a light entrance region;
- forming a mask having a predetermined pattern on the metal film in the light entrance region, and forming a resist film in part or all of a periphery of the light entrance region;
- and
- dry-etching the metal film in the light entrance region to form a polarization pattern,
- wherein forming the resist film in part or all of the periphery of the light entrance region comprises forming the resist film such that the resist film circumferentially encloses the light entrance region.
2 more elements
Dependencies are inferred from the claim text.