Systems and methods for test circuitry for insulated-gate bipolar transistors

A driver circuit for testing a saturation level in an insulated gate bipolar transistor (“IGBT”), the driver circuit comprising:

• a comparator having a first input coupled to a reference voltage and a second input coupled to a saturation test node;
• a first transistor having a first current electrode coupled to the first input of the comparator, a second current electrode coupled to a supply voltage, and a control electrode coupled to a first output of a test circuit, wherein the first output is associated with a test initiation function of an internal test process;
• a second transistor having a first current electrode coupled to a control electrode of the IBGT transistor, a second current electrode coupled to the supply voltage, and a control electrode coupled to a second output of the test circuit, wherein the second output is associated with an over-current indication of the internal test process;
• and
• wherein the test circuit is operable to perform the internal test process to confirm an operation of the comparator, the second transistor, and the test circuit.