Method for evaluating oxide semiconductor thin film, and method for quality control of oxide semiconductor thin film
AssigneeKobe Steel, Ltd.
InventorsKazushi Hayashi, Toshihiro Kugimiya, Tomoya Kishi, Aya Miki
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Abstract
This method for evaluating an oxide semiconductor thin film includes evaluating the stress stability of an oxide semiconductor thin film on the basis of the light emission intensity of luminescent light excited when radiating an electron beam or excitation light at a sample at which the oxide semiconductor thin film is formed. The stress stability of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity (L1) observed in the range of 1.6-1.9 eV of the luminescent light excited from the oxide semiconductor thin film.
Claims12
A method for evaluating an oxide semiconductor thin film comprising evaluating the stress stability of an oxide semiconductor thin film on the basis of a light emission intensity of luminescent light excited when radiating an electron beam or excitation light at a sample at which the oxide semiconductor thin film is formed;
- wherein the stress stability of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity (L1) observed in the range of 1.6-1.9 eV of the luminescent light excited from the oxide semiconductor thin film.
Dependencies are inferred from the claim text.