Apparatus and method for the production of ingots

#The invention relates to an apparatus and a method for the production of ingots.

#Techniques for bulk growth of crystals, especially those made from silicon, include float zone (FZ), Czochralski (Cz) and multicrystalline (mc) growth. Each of these methods has drawbacks and limitations.

#It is an object of the invention to provide an apparatus and a method to facilitate the production of ingots.

#FIG. 1 shows a sectional view of an embodiment of the invention,

#FIG. 2 shows a schematic sectional partial view of another embodiment of the invention,

#FIG. 3 shows a simplified view of the embodiment according to FIG. 2 at the beginning of the process,

#According to an embodiment shown in FIG. 1, an apparatus 1 for the production of ingots, in particular for the production of silicon ingots, comprises a chamber 2 to provide a controllable atmosphere. The chamber 2 has a top 3 and a bottom 4 spaced apart from each other in a longitudinal direction 5.

#The bottom 4 of the chamber 2 is built as bottom plate. The top 3 is built as a lid, but could be configured as a thermal separation layer dividing the growth volume from the melting volume. The chamber 2 further comprises a sidewall 20, which extends in the longitudinal direction 5. The side wall 20 preferably forms a gastight connection with the bottom 4 and optionally with the top 3. Along the sidewall 20 there is arranged a thermal insulation 21. The insulation 21 can be made of alumina fiber, carbon fiber, or any other suitable thermal insulator.

#In the bottom 4 of the chamber 2 there is an exhaust 22. The chamber 2 is connected to a gas exchange apparatus 23 by way of the exhaust 22. It thus provides a controllable atmosphere. The gas exchange apparatus 23 can be a vacuum device to evacuate the chamber 2. In general, the gas exchange apparatus 23 forms a means for controlling the atmosphere inside the chamber 2.