Synthesis and use of precursors for ALD of group VA element containing thin films
AssigneeASM IP Holding B.V.
InventorsViljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä
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Abstract
Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.
Claims26
An atomic layer deposition (ALD) process for forming a nitrogen-containing thin film on a substrate in a reaction chamber comprising a plurality of deposition cycles, each cycle comprising:
- providing a pulse of a first vapor phase halide reactant into the reaction chamber to form no more than about a single molecular layer of the reactant on the substrate, wherein the first vapor phase reactant does not comprise transition metal;
- removing excess first reactant from the reaction chamber;
- providing a pulse of a second vapor phase reactant to the reaction chamber such that the second vapor phase reactant reacts directly with the first halide reactant on the substrate to form a nitrogen containing thin film, wherein the second vapor phase reactant comprises N(AR1R2R3)xR3−x, and wherein x is from 1 to 3, A is Si, Ge or Sn, and R, R1, R2, and R3 can be independently selected to be linear, cyclic, branched or substituted alkyl, hydrogen or aryl groups;
- and
- removing excess second reactant and reaction byproducts, if any, from the reaction chamber,
- wherein the nitrogen containing thin film is BN, AlN, GaN or InN.
An atomic layer deposition (ALD) process for forming a thin film comprising a group VA element on a substrate in a reaction chamber, the process comprising a plurality of Group VA element deposition cycles, wherein each of the Group VA element deposition cycles comprise:
- providing a pulse of a first vapor phase halide reactant into the reaction chamber to form no more than about a single molecular layer of the reactant on the substrate;
- removing excess first reactant from the reaction chamber;
- providing a pulse of a second vapor phase reactant to the reaction chamber such that the second vapor phase reactant reacts directly with the first halide reactant on the substrate to form a thin film comprising a group VA element, wherein the second vapor phase reactant comprises a group VA atom that is bonded to one or more of Si, Ge, or Sn, wherein the group VA element is Sb;
- and
- removing excess second reactant and reaction byproducts, if any, from the reaction chamber.
An atomic layer deposition (ALD) process for forming a thin film comprising a group VA element on a substrate in a reaction chamber, the process comprising a plurality of Group VA element deposition cycles, wherein each of the Group VA element deposition cycles comprise:
- providing a pulse of a first vapor phase reactant into the reaction chamber to form no more than about a single molecular layer of the reactant on the substrate;
- removing excess first reactant from the reaction chamber;
- providing a pulse of a second vapor phase reactant to the reaction chamber such that the second vapor phase reactant reacts with the first reactant on the substrate to form a thin film comprising a group VA element, wherein the second vapor phase reactant comprises As(SiR1R2R3)3, wherein R1, R2, and R3 are alkyl groups with one or more carbon atoms.
Dependencies are inferred from the claim text.