Methods for processing a substrate using multiple substrate support positions

A method for processing a substrate disposed on a substrate support in a process chamber, comprising:

• moving the substrate support to a first position such that a top surface of the substrate is positioned about 3 mm above to about 10 mm below a top surface of a cover ring disposed about a periphery of the substrate support;
• performing a plasma deposition process within the process chamber while the substrate support is in the first position to deposit a material on the substrate;
• subsequently moving the substrate support to a second position such that the top surface of the substrate is disposed about 3 mm below to about 15 mm above the top surface of the cover ring;
• and
• performing a plasma etch process within the process chamber while the substrate support is in the second position, wherein the plasma etch process removes at least a portion of the material deposited during the plasma deposition process, and wherein a position of the cover ring is not changed between the plasma deposition process and the plasma etch process performed.