Low-e panels with ternary metal oxide dielectric layer and method for forming the same

A method for forming a low-e panel, the method comprising:

• providing a transparent substrate;
• forming a metal oxynitride layer over the transparent substrate, the metal oxynitride layer comprising a first element, a second element, and a third element, wherein the first element is tin or zinc, the second element is strontium, and the third element is hafnium;
• and
• forming a silver layer over the transparent substrate.

A method for forming a low-e panel, the method comprising:

• providing a transparent substrate;
• forming a first metal oxide layer over the transparent substrate, wherein the first metal oxide layer comprises oxygen, a first element, a second element, and a third element, wherein the first element is tin or zinc, the second element is strontium, and the third element is hafnium;
• forming a reflective layer over the first metal oxide layer;
• and
• forming a second metal oxide layer over the reflective layer, wherein the second metal oxide layer is made of the same material as the first metal oxide.