CMP pad conditioner, and method for producing the CMP pad conditioner
AssigneeEhwa Diamond Industrial Co., Ltd.
InventorsSeh Kwang Lee, Youn Chul Kim, Joo Han Lee, Jae Kwang Choi, Jae Phil Boo
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Abstract
This invention relates to a conditioner for a CMP (Chemical Mechanical Polishing) pad, which is used in a CMP process which is part of the fabrication of a semiconductor device, and more particularly, to a CMP pad conditioner in which the structure of the cutting tips is such that the change in the wear of the polishing pad is not great even when different kinds of slurry are used and when there are changes in pressure of the conditioner, and to a method of manufacturing the same.
Claims15
A CMP (Chemical Mechanical Polishing) pad conditioner, comprising:
- a substrate;
- and
- a plurality of cutting tips protruding upwards from a surface of the substrate and spaced apart from each other,
- wherein the cutting tips have a structure in which a top surface of each of the cutting tips is a plane parallel to the surface of the substrate, and
- wherein the plurality of cutting tips comprises a number of cutting tips such that, under a load applied to the CMP pad conditioner for conditioning, an average pressure applied to each of the cutting tips ranges from 1.55×10−4 lbf/in2 to 3.1×10−2 lbf/in2.
A method of manufacturing a CMP pad conditioner comprising:
- determining an average pressure to be applied to each cutting tip of a substrate put in contact with a pad during conditioning, the average pressure being in a range from 1.55×10−4 lbf/in2 to 3.1×10−2 lbf/in2;
- determining a size and a number of a plurality of cutting tips to be formed to protrude upwards from a surface of the substrate depending on the determined average pressure;
- and
- forming the cutting tips on the substrate depending on the determined size and the determined number of the cutting tips.
Dependencies are inferred from the claim text.