Method for forming copper wiring
AssigneeTokyo Electron Limited
InventorsTadahiro Ishizaka, Kenji Suzuki, Atsushi Shimada
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Abstract
There is provided a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess, which is formed in a predetermined pattern in a Si-containing film of a substrate. The Cu wiring forming method includes forming a Mn film, which becomes a self-aligned barrier film by reaction with an underlying base, at least on a surface of the recess by chemical vapor deposition, forming a Cu film by a physical vapor deposition to fill the recess with the Cu film, and forming a Cu wiring in the recess by polishing the entire surface of the substrate by a chemical mechanical polishing.
Claims5
A Cu wiring forming method for forming a Cu wiring by filling Cu in a recess formed in a predetermined pattern in a Si-containing interlayer insulating film, of a substrate, the Cu wiring forming method comprising:
- forming an NH group only on a surface of the Si-containing interlayer insulating film such that the surface of the Si-containing interlayer insulating film becomes hydrophilic;
- forming a Mn film, which becomes a self-aligned barrier film by reaction with an underlying base, at least on a surface of the recess by chemical vapor deposition;
- forming a Cu film by physical vapor deposition to fill the recess with the Cu film;
- and
- forming a Cu wiring in the recess by polishing the entire surface of the substrate by chemical mechanical polishing,
- wherein the Cu wiring forming method further comprises, between said forming the NH group and said forming the Mn film, forming an OH group or a H group on the surface of the Si-containing interlayer insulating film.
Dependencies are inferred from the claim text.