Semiconductor package design providing reduced electromagnetic coupling between circuit components

A semiconductor device package comprising:

• a flange;
• a first set of circuit components mounted on the flange, wherein
• a first circuit component and a second circuit component of the first set of circuit components are coupled by a first set of conductors,
• the first circuit component of the first set of circuit components comprises a transistor,
• the second circuit component of the first set of circuit components comprises a capacitor, and
• the semiconductor device package comprises a Doherty power amplifier and the first set of circuit components comprises a carrier amplifier circuit;
• a second set of circuit components mounted on the flange, wherein
• a first circuit component and a second circuit component of the second set of circuit components are coupled by a second set of conductors,
• the first circuit components of the first set of circuit components comprises a transistor,
• the second circuit component of the first set of circuit components comprises a capacitor, and
• the second set of circuit components comprises a peaking amplifier circuit;
• and
• an electromagnetic isolation structure located between the first set of conductors and the second set of conductors, wherein
• the electromagnetic isolation structure is adhesively coupled directly to the flange,
• the first set of conductors and the second set of conductors are bond wire arrays, and
• one or more conductors of the first set of conductors are located sufficiently close to the second set of conductors to induce a current in one or more conductor of the second set of conductors when a current is passed through the one or more conductor of the first set of conductors in the absence of the electromagnetic isolation structure wherein a height of the electromagnetic isolation structure is higher than the highest conductor of the first and second sets of conductors.