US 9,312,479 B2 · Variable resistance memory device

Abstract

The present invention relates to a variable resistance memory device and a method for forming the same. A variable resistance memory device according to the present invention includes a first electrode; a second electrode spaced apart from the first electrode; a resistance variable layer and a metal-insulator transition layer provided between the first electrode and the second electrode; and a heat barrier layer provided (i) between the first electrode and the metal-insulator transition layer, (ii) between the metal-insulator transition layer and the resistance variable layer, or (iii) between the second electrode and the metal-insulator transition layer. The present invention prevents dissipation of heat generated in the metal-insulator transition layer using a thermal boundary resistance (TBR) phenomenon, and thus current and voltage to operate the variable resistance memory device can be reduced.

Claims23

Dependent claims

A variable resistance memory device comprising:

a first electrode;
a second electrode spaced apart from the first electrode;
a resistance variable layer and a metal-insulator transition layer provided between the first electrode and the second electrode;
and a heat barrier layer provided between the first electrode and the metal-insulator transition layer, between the metal-insulator transition layer and the resistance variable layer, or between the second electrode and the metal-insulator transition layer,
wherein the heat barrier layer includes an insulating material having a thickness that allows electron tunneling.

2 more elements

Dependencies are inferred from the claim text.

Variable resistance memory device

Life of this patent

Variable resistance memory device

Life of this patent

Abstract

Claims23