Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element

A magnetoresistive element comprising:

• a first magnetic layer having an axis of easy magnetization perpendicular to a film plane, and a variable magnetization direction;
• a second magnetic layer having an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization direction;
• a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer;
• and
• a conductive layer formed on a surface of the first magnetic layer, which is opposite to a surface on which the first nonmagnetic layer is formed,
• wherein the first magnetic layer comprises:
• a first magnetic material including Co and Fe;
• a first nonmagnetic material including at least one element from among Ta, W, Nb, Mo, Zr and Hf;
• a second nonmagnetic material including at least one element from among Ta, W, Nb, Mo, Zr and Hf;
• and
• a second magnetic material including Co and Fe,
• wherein the first magnetic material contacts the first nonmagnetic layer and includes a crystallized portion, the first nonmagnetic material contacts the conductive layer, the second nonmagnetic material is between the first magnetic material and the first nonmagnetic material and includes an amorphous state, and the second magnetic material is between the second nonmagnetic material and the first nonmagnetic material and includes an amorphous state.