Electronic devices having semiconductor memory units having magnetic tunnel junction element

An electronic device comprising a semiconductor memory unit that includes:

• a first magnetic layer having an easy magnetization axis in a first direction and having a variable magnetization direction;
• a third magnetic layer having a magnetization direction pinned in the first direction;
• a second magnetic layer interposed between the first magnetic layer and the third magnetic layer and having a magnetization direction pinned in a second direction different from the first direction;
• a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer;
• and
• a non-magnetic layer interposed between the second magnetic layer and the third magnetic layer,
• wherein the second direction is inclined from the first direction at an angle of greater than 0 degree and less than 90 degrees and the second direction is inclined from a direction vertical to a surface of the first magnetic layer to a direction parallel to the surface of the first magnetic layer.