Vertical hall effect sensor

A vertical Hall effect sensor comprising:

• a semiconductor wafer having a first conductivity type;
• a plurality of semiconductive electrodes disposed on the semiconductor wafer, the plurality of semiconductive electrodes having the first conductivity type, comprising:
• a source electrode;
• a first sensing electrode and a second sensing electrode, arranged such that the source electrode is between the first sensing electrode and the second sensing electrode;
• and
• a first drain electrode and a second drain electrode, arranged such that the first sensing electrode, second sensing electrode, and source electrode are between the first drain electrode and the second drain electrode;
• and
• a plurality of semiconductor fingers disposed on the semiconductor wafer and interdigitated with the plurality of semiconductive electrodes, the semiconductor fingers having a second conductivity type,
• wherein the plurality of semiconductor fingers interdigitated with the plurality of semiconductive electrodes comprises a first semiconductor finger of the plurality of semiconductor fingers disposed between the source electrode and the first sensing electrode.