Method of implementing a ferroelectric tunnel junction, device comprising a ferroelectric tunnel junction and use of such a device

A method of writing reading a piece of information in a ferroelectric tunnel junction, said junction comprising two films, each of the films forming an electrode-type conductive element, separated by a ferroelectric film, the ferroelectric film having a thickness comprised between 0.1 and 10 nm to form a ferroelectric element acting as a tunnel barrier, said ferroelectric film being able to possess a remnant polarization, wherein the ferroelectric film possesses a ferroelectric domain structure comprising ferroelectric domains corresponding to regions in the ferroelectric element where the polarization is oriented in the same sense and the same direction, a value of a resistance of the ferroelectric tunnel junction depending on a ferroelectric domain structure of the ferroelectric film, said method comprising:

• storing a piece of information in the ferroelectric tunnel junction by applying a writing voltage between the films adapted to store said piece of information in said ferroelectric tunnel junction b creating a ferroelectric domain structure in the ferroelectric film;
• and
• reading, in a non-destructive manner, the piece of information stored in the ferroelectric tunnel junction, by applying a reading voltage whose absolute value is lower than the absolute value of the writin volta e, so as to generate a tunnel current through the ferroelectric barrier, wherein (1) the value of the resistance being recovered based on a ratio of the value of the reading voltage to the value of the tunnel current, and (2) the value of the resistance depending on the ferroelectric domain structure previously created.