US 9,312,464 B2Granted

Flip chip package structure and wafer level package structure

AssigneePlayNitride Inc.

InventorsShao-Hua Huang, Chih-Ling Wu, Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai

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Abstract

A flip chip package structure includes a package base and a LED chip. The package base includes a first substrate, a first and a second electrodes disposed on the first substrate and a bonding layer disposed on the first substrate. The LED chip is flipped on the package base and includes an epitaxy layer, a third and a fourth electrodes disposed on the epitaxy layer and contacting the first and the second electrodes, a second insulating layer disposed between the third and the fourth electrodes, and a plurality of bonding pillars disposed on the second insulating layer and contacting the bonding layer. A minimum interval between the bonding layer, the first and the second electrodes and a minimum interval between the bonding pillars, the second and the third electrodes are larger than a width of each bonding pillar.

Claims17

Dependent claims

A flip chip package structure, comprising:

a package base, comprising:
a first substrate;
a first electrode, disposed on a part of the first substrate;
a second electrode, disposed on a part of the first substrate and kept a distance from the first electrode;
and
a bonding layer, disposed on a part of the first substrate;
and
a light emitting diode chip, flipped on the package base and electrically connected with the package base, wherein the light emitting diode chip comprises:
an epitaxy layer;
a third electrode, disposed on a part of the epitaxy layer and contacting the first electrode;
a fourth electrode, disposed on a part of the epitaxy layer and contacting the second electrode, wherein the fourth electrode is kept a distance from the third electrode;
at least one second insulating layer, disposed on a part of the epitaxy layer and located between the third electrode and the fourth electrode;
and
a plurality of bonding pillars, disposed on the at least one second insulating layer, at least a part of the bonding pillars contacting the bonding layer, wherein:
a minimum interval between the bonding layer and the first electrode and a minimum interval between the bonding layer and the second electrode are greater than a width of each of the bonding pillars, and a minimum interval between the bonding pillars and the third electrode and a minimum interval between the bonding pillars and the fourth electrode are greater than the width of each of the bonding pillars.

12 more elements

A flip chip package structure, comprising:

a package base, comprising:
a first substrate;
a first electrode, disposed on a part of the first substrate;
a second electrode, disposed on a part of the first substrate and kept a distance from the first electrode;
and
a metal bonding layer, disposed on a part of the first substrate, wherein the metal bonding layer does not contact the first electrode and the second electrode;
and
a light emitting diode chip, flipped on the package base and electrically connected with the package base, wherein the light emitting diode chip comprises:
an epitaxy layer;
a third electrode, disposed on a part of the epitaxy layer and contacting the first electrode;
a fourth electrode, disposed on a part of the epitaxy layer and contacting the second electrode, wherein the fourth electrode is kept a distance from the third electrode;
at least one second insulating layer, disposed on a part of the epitaxy layer and located between the third electrode and the fourth electrode;
and
a plurality of metal bonding pillars, disposed on the at least one second insulating layer and not contacting the third electrode and the fourth electrode, wherein at least a part of the metal bonding pillars contact the metal bonding layer.

11 more elements

Dependencies are inferred from the claim text.