Semiconductor light emitting device

A semiconductor light emitting device, comprising:

• a plurality of semiconductor layers, which grows sequentially using a growth substrate, and which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination;
• a contact area where a first semiconductor layer is exposed as a result of the partial removal of a second semiconductor layer and an active layer;
• a non-conductive reflective film adapted to cover the second semiconductor layer and the contact area, such that light from the active layer is reflected towards the first semiconductor layer on the side of a growth substrate;
• a first finger electrode extending between the non-conductive reflective film and the second semiconductor layer;
• a first electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the first finger electrode;
• and
• a first direct-connection type electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the second semiconductor layer.