Light-emitting device with reflecting electrode

A light-emitting system comprising a plurality of light-emitting devices, each device comprising:

• a semiconductor structure including a P-type semiconductor layer, an N-type semiconductor layer, and a light-emitting layer between the P-type semiconductor layer and the N-type semiconductor layer;
• an electrode including a current injection layer, a current steering layer, and a reflecting layer, wherein the current steering layer is disposed substantially only at a periphery of the reflecting layer, has at least a portion forming a contact surface with the reflecting layer, and forms an electric connection with only a side surface of the reflecting layer;
• wherein in a case of forward conduction, a current flows to the reflecting layer through the current steering layer surrounding the reflecting layer, generating a potential gradient at the contact surface, thereby suppressing electromigration of a metal in the electrode.