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US 9,312,448 B2Granted
Metallic contact for optoelectronic semiconductor device
AssigneeSensor Electronic Technology, Inc.
InventorsAlexander Lunev, Maxim S Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
Life of this patent
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Abstract
A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.
Claims20
A device comprising:
- a light emitting heterostructure semiconductor layer;
- and
- a contact to the light emitting heterostructure semiconductor layer located over the light emitting heterostructure semiconductor layer, wherein the contact includes:
- a semiconductor contact structure adjacent to the light emitting heterostructure semiconductor layer, wherein the semiconductor contact structure comprises a first semiconductor layer that is highly conducting and a second semiconductor layer that is partially insulating;
- and
- a metal layer including a plurality of contact areas formed of a metal and separated by a set of voids where no metal is located over the semiconductor contact structure, wherein a characteristic distance between the plurality of contact areas is approximately equal to a product of a thickness of the semiconductor contact structure and a vertical resistivity of the semiconductor contact structure divided by a product of a characteristic contact length scale of the contact and a sheet resistance of the semiconductor contact structure.
3 more elements
A device comprising:
- a light emitting structure including a semiconductor contact structure, wherein the semiconductor contact structure comprises a first semiconductor layer that is highly conducting and a second semiconductor layer that is partially insulating;
- and
- a metallic contact to the semiconductor contact structure located over the semiconductor contact structure, wherein the metallic contact includes:
- a plurality of contact areas, wherein at least one of the plurality of contact areas includes:
- a plurality of perforating elements, each perforating element comprising a metal deposited in a cavity in the semiconductor contact structure, wherein a depth of the cavity exceeds at least a thickness of the second semiconductor layer of the semiconductor contact structure;
- a top layer of metal located over an area of the semiconductor contact structure including the plurality of perforating elements;
- and
- a set of voids where no metal is located, wherein at least one of the set of voids is configured based on one of:
- a reflectivity or a transparency of light emitted by the light emitting structure, and wherein a characteristic distance between the plurality of contact areas is approximately equal to a product of a thickness of the semiconductor contact structure and a vertical resistivity of the semiconductor contact structure divided by a product of a characteristic contact length scale of the contact and a sheet resistance of the semiconductor contact structure.
6 more elements
An emitting device, comprising:
- a group III nitride-based light emitting heterostructure semiconductor layer;
- and
- a contact to the group III nitride-based light emitting heterostructure semiconductor layer located over the group III nitride-based light emitting heterostructure semiconductor layer, wherein the contact includes:
- a semiconductor contact structure adjacent to the group III nitride-based light emitting heterostructure semiconductor layer, wherein the semiconductor contact structure comprises a first semiconductor layer that is highly conducting and a second semiconductor layer that is partially insulating;
- and
- a metal layer including a plurality of contact areas formed of a metal and separated by a set of voids where no metal is located over the semiconductor contact structure, wherein a characteristic distance between the plurality of contact areas is approximately equal to a product of a thickness of the semiconductor contact structure and a vertical resistivity of the semiconductor contact structure divided by a product of a characteristic contact length scale of the contact and a sheet resistance of the semiconductor contact structure.
3 more elements
Dependencies are inferred from the claim text.