Near UV light emitting device

A light emitting device comprising:

• an n-type contact layer comprising an AlGaN layer or AlInGaN layer;
• a p-type contact layer comprising an AlGaN layer or AlInGaN layer;
• an active area disposed between the n-type contact layer and the p-type contact layer,
• and having a multi-quantum well structure;
• at least one electron control layer disposed between the n-type contact layer and the active area;
• a super-lattice layer disposed between the n-type contact layer and the active area;
• and
• an electron implantation layer disposed between the super-lattice layer and the active area,
• wherein the electron implantation layer has a higher n-type impurity doping concentration than the super-lattice layer,
• wherein the first barrier layer contacts the electron implantation layer,
• wherein the active area comprises barrier layers and well layers, the barrier layers being formed of AlInGaN or AlGaN and comprising a first barrier layer that is disposed closer to the n-type contact layer than any other barrier layer and that comprises a higher percentage of Al than any other barrier layer, and
• wherein the electron control layer is formed of AlInGaN or AlGaN and contains a higher percentage of Al than adjacent layers, such that the electron control layer is configured to obstruct the movements of electrons into the active area.