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US 9,312,444 B2Granted
Semiconductor light emitting device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorHideto Sugawara
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Abstract
A semiconductor light emitting device includes a supporting substrate, a light emitting layer including a nitride semiconductor, and a nitride multilayer film. The nitride multilayer film includes a first layer including a first nitride semiconductor containing aluminum nitride, a second layer including a second nitride semiconductor containing gallium nitride, and a third layer including the first nitride semiconductor containing aluminum nitride.
Claims20
A method of manufacturing a semiconductor light emitting device, comprising:
- performing epitaxial growth of a nitride multilayer film on an upper surface of a first substrate;
- forming a light emitting layer including a nitride semiconductor on an upper surface of the nitride multilayer film;
- joining a second substrate to an upper surface of a first laminate that includes the first substrate, the nitride multilayer film and the light emitting layer;
- and
- removing the first substrate to expose a lower surface of the nitride multilayer film, the nitride multilayer film being at an exposed surface of a second laminate that includes the second substrate, the light emitting layer, and the nitride multilayer film forming an antireflection layer for light emitted from the light emitting layer,
- wherein the epitaxial growth of the nitride multilayer film is performed by forming a first layer including a first nitride semiconductor containing aluminum, forming a second layer including a second nitride semiconductor with a refractive index different from the refractive index of the first nitride semiconductor, and forming a third layer including the first nitride semiconductor containing aluminum.
3 more elements
A semiconductor light emitting device, comprising:
- a substrate;
- a light emitting layer including a nitride semiconductor formed on a surface of the substrate;
- and
- a nitride multilayer film formed on the light emitting layer, the light emitting layer being between the surface of the substrate and the nitride multilayer film,
- wherein the nitride multilayer film is formed from a first layer including a first nitride semiconductor containing aluminum, a second layer including a second nitride semiconductor having a refractive index different from the refractive index of the first nitride semiconductor, and a third layer including the first nitride semiconductor containing aluminum, such that the nitride multilayer film includes laminated k pairs of the first layer and the second layer, where k is an integer of 1 or more, and the third layer disposed on a side of the nitride multilayer film apart from the light emitting layer, and
- wherein, when a thickness of the pair is t, a thickness of the third layer is t3, a wavelength of a light emitted from the light emitting layer is λ, a refractive index of the first nitride semiconductor is n1, and a refractive index of the second nitride semiconductor is n2, the following equations are satisfied:
- t=λ/4n1+λ/4n2, and
- t3=λ/4n1.
5 more elements
A method of manufacturing a semiconductor light emitting device, comprising:
- bonding a first laminate including a semiconductor substrate, a nitride multilayer film formed on an upper surface of the semiconductor substrate, and a light emitting layer formed on an upper surface of the nitride multilayer film to a supporting substrate, the light emitting layer being between the supporting substrate and the nitride multilayer film;
- and
- removing the semiconductor substrate to expose a lower surface of the nitride multilayer film, the nitride multilayer film being at an exposed surface of a second laminate that includes the supporting substrate, the light emitting layer, and the nitride multilayer film forming an antireflection layer for light emitted from the light emitting layer,
- wherein the nitride multilayer film is formed from a first layer including a first nitride semiconductor containing aluminum, a second layer including a second nitride semiconductor having a refractive index different from the refractive index of the first nitride semiconductor, and a third layer including the first nitride semiconductor containing aluminum, such that the nitride multilayer film includes laminated k pairs of the first layer and the second layer, where k is an integer of 1 or more, and the third layer disposed on a side of the nitride multilayer film apart from the light emitting layer.
1 more element
A semiconductor light emitting device, comprising:
- a substrate;
- a light emitting layer including a nitride semiconductor formed on a surface of the substrate;
- a nitride multilayer film formed on the light emitting layer, the light emitting layer being between the surface of the substrate and the nitride multilayer film;
- a gallium nitride layer between the light emitting layer and the nitride multilayer film;
- and
- a super lattice layer including GaN and InGaN, between the light emitting layer and the gallium nitride layer,
- wherein the nitride multilayer film is formed from a first layer including a first nitride semiconductor containing aluminum, a second layer including a second nitride semiconductor having a refractive index different from the refractive index of the first nitride semiconductor, and a third layer including the first nitride semiconductor containing aluminum, such that the nitride multilayer film includes laminated k pairs of the first layer and the second layer, where k is an integer of 1 or more, and the third layer disposed on a side of the nitride multilayer film apart from the light emitting layer.
4 more elements
Dependencies are inferred from the claim text.