Semiconductor light device and manufacturing method for the same

A semiconductor light device, comprising:

• a semiconductor substrate having a first conduction type;
• a first cladding layer having the first conduction type and deposited above the semiconductor substrate;
• an active layer deposited above the first cladding layer;
• a second cladding layer having a second conduction type and deposited above the active layer;
• and
• a contact layer deposited on the second cladding layer,
• wherein
• the active layer includes
• a window portion that is disordered via diffusion of vacancies, and
• a non-window portion having less disordering than the window portion,
• the contact layer includes
• a first region, and
• a second region that is below the first region and has greater affinity for hydrogen than the first region,
• the second region has
• a first hydrogen concentration in a region corresponding to the non-window portion, and
• a second hydrogen concentration in a region corresponding to the window portion,
• the first hydrogen concentration is higher than the second hydrogen concentration, and
• the first hydrogen concentration in the region corresponding to the non-window portion is greater than 8.0E+16 atoms/cm3.