Nanowire structure and method for manufacturing the same
AssigneeGlo AB
InventorTruls Lowgren
Life of this patent
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Abstract
A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices.
Claims1
A method of making a top emitting light emitting (LED) structure, comprising:
- forming a plurality of devices located on a first surface of a support layer, the devices comprising a semiconductor nanowire core of a first conductivity type and a semiconductor shell of a second conductivity type;
- forming a first transparent electrode which is electrically connected to the shells of the devices;
- forming a second electrode located in electrical contact with the first surface of the support layer and electrically connected to the cores of the devices through the support layer;
- providing a reflective layer below the cores of the devices and a carrier which is attached to the structure below the reflective layer;
- forming a first contact electrically connecting the carrier to a first pad area of the first electrode;
- and
- forming a second contact electrically connecting the carrier to a second pad area of the second electrode.
Dependencies are inferred from the claim text.