Epitaxy structure of a light emitting element having III-nitride quantum wells

An epitaxy structure of a light emitting element comprising:

• a gallium nitride substrate including a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid, with the gallium nitride hexagonal prism extending from the gallium nitride buffer layer along an axis, with the gallium nitride hexagonal pyramid extending from the gallium nitride hexagonal prism along the axis and gradually expanding to form a hexagonal frustum;
• an N-type gallium nitride layer located on the gallium nitride hexagonal pyramid of the gallium nitride substrate;
• a plurality of quantum well units stacked on each other, with each of the plurality of quantum well units including an indium gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer, wherein the indium gallium nitride layer of one of two adjacent quantum well units adjoins the gallium nitride layer of another of the two adjacent quantum well units, and wherein the indium gallium nitride layer of one of the plurality of quantum well units not adjoining any gallium nitride layer is connected to the N-type gallium nitride layer;
• and
• a P-type gallium nitride layer located on the gallium nitride layer of one of the plurality of quantum well units not adjoining any indium gallium nitride layer.