Semiconductor light emitting device

A semiconductor light emitting device comprising:

• a first conductivity-type semiconductor base layer;
• and
• a plurality of light emitting nanostructures disposed spaced apart from one another on the first conductivity-type semiconductor base layer and including a first conductivity-type semiconductor core, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively,
• wherein the electric charge blocking layer has different thicknesses and impurity concentrations on first and second crystal planes of the first conductivity-type semiconductor core and includes an impurity having a first concentration, the second conductivity-type semiconductor layer includes the impurity having a second concentration, and the first concentration is half or less of the second concentration, wherein a thickness of the electric charge blocking layer is less than a thickness of the second conductivity-type semiconductor layer, and wherein the first conductivity-type semiconductor core is in direct contact with an active layer.