US 9,312,438 B2 · Nitride light emitting diode and fabrication method thereof

Abstract

An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the current conduction path, and implementation of the main structure is to grow a high-resistivity material (e.g., InxAlyGa1-x-yN) over the N-type conductive layer or the P-type conductive layer till part of current conduction path is exposed through high-temperature H2 in-situ etching in the reacting furnace and to grow the N-type or the P-type conductive layer for coverage. This design for forming a current modulation layer without second epitaxial growth provides the injected current with a better spreading path in the N-type conductive layer and the P-type conductive layer, which more effectively and uniformly injects the current to the active layer and improves luminous efficiency.

Claims12

Dependent claims

A nitride light emitting diode, comprising an N-type conductive layer, a P-type conductive layer, and a light-emitting layer between the N-type conductive layer and the P-type conductive layer;

a current modulation layer in at least one of the N-type conductive layer or the P-type conductive layer and comprising a nitride insulation material layer with opening structures, wherein the opening structure is configured for current conduction and is etched by injecting H2 into an epitaxial growth reacting furnace;
and wherein the opening structures of the current modulation layer have a random and discrete distribution.

Dependencies are inferred from the claim text.

Nitride light emitting diode and fabrication method thereof

Life of this patent

Nitride light emitting diode and fabrication method thereof

Life of this patent

Abstract

Claims12