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US 9,312,436 B2Granted
Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
AssigneeKabushiki Kaisha Toshiba
InventorsHiroshi Ono, Tomonari Shioda, Naoharu Sugiyama, Toshiyuki Oka, Shinya Nunoue
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Abstract
According to one embodiment, a nitride semiconductor device includes a first layer and a functional layer. The first layer is formed on an amorphous layer, includes aluminum nitride, and has a compressive strain or a tensile strain. The functional layer is formed on the first layer and includes a nitride semiconductor.
Claims15
A nitride semiconductor device comprising:
- a first layer formed on an amorphous layer, wherein said first layer comprises aluminum nitride and has a compressive strain or an tensile strain;
- and
- a functional layer formed on the first layer, wherein said functional layer comprises a nitride semiconductor,
- wherein the first layer is provided on a second layer, the second layer being provided on the amorphous layer and having one of a face-centered cubic lattice structure and a body-centered cubic lattice structure.
1 more element
A nitride semiconductor wafer comprising:
- a substrate;
- an amorphous layer provided on the substrate;
- a first layer formed on an amorphous layer, wherein said first layer comprises aluminum nitride and has a compressive strain or an tensile strain;
- a functional layer formed on the first layer, wherein said functional layer comprises a nitride semiconductor;
- and
- a second layer provided between the amorphous layer and the first layer, and having one of a face-centered cubic lattice structure and a body-centered cubic lattice structure.
3 more elements
A method for manufacturing a nitride semiconductor layer, comprising:
- forming an amorphous layer on a substrate;
- forming a first layer on the amorphous layer by sputtering, wherein the first layer comprises aluminum nitride and has a compressive strain or a tensile strain;
- and
- forming a functional layer on the first layer, wherein the functional layer comprises a nitride semiconductor,
- wherein the forming the first layer comprises
- forming a second layer on the amorphous layer, the second layer having one of a face-centered cubic lattice structure and a body-centered cubic lattice structure, and
- forming the first layer on the second layer.
4 more elements
Dependencies are inferred from the claim text.