Optoelectronic semiconductor device

An optoelectronic semiconductor device comprising:

• a first light source that emits white-green light and comprises a semiconductor chip that emits in a blue spectral range, and a first conversion element attached directly to the semiconductor chip,
• a second light source that emits red light, having a semiconductor chip that emits in the blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range,
• a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, the third light source is free of a conversion element, and
• a filler body having a matrix material which is a silicone and into which a conversion agent is embedded and distributed homogenously in the entire filler body, wherein
• 1) the filler body is disposed downstream of the light sources collectively,
• 2) all of the semiconductor chips of the light sources are surrounded in the lateral direction by a reflector filler at least in places, the reflector filler is formed from a silicone as a matrix material into which reflective particles are embedded,
• 3) the filler body is disposed downstream of the reflector filler along a main radiation direction of the semiconductor device and is applied directly onto the reflector filler,
• 4) the filler body covers the entire reflector filler,
• 5) the first conversion element converts at most 70% of the light from the semiconductor chip of the first light source,
• 6) the filler body converts between 30% and 80% of the light from the semiconductor chips which emit in the blue spectral range, of the first and of the third light sources and the filler body does not absorb green and red light or only absorbs it to a negligible extent,
• 7) the optoelectronic semiconductor device emits white mixed light formed from light from the three light sources and from the filler body,
• 8) the light from the first light source has, prior to entering the filler body, a chromaticity coordinate in the CIE chromaticity diagram of 0.1<cx<0.31 and 0.1<cy<0.32,
• 9) the semiconductor device, during operation, emits white mixed light with a correlated color temperature of 2300K to 7000 K,
• 10) the filler body and the second conversion element contain mutually different conversion agents, and
• 11) the filler body comprises, in addition to the conversion agent, scattering particles, a refractive index difference between the matrix material of the filler body and a material of the scattering particles at a temperature of 300K is at the most 0.02.