Light emitting element
AssigneeLG Innotek Co., Ltd.
InventorsDae Seob Han, Yong Tae Moon, A Ra Cho, Kwang Sun Baek
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Abstract
Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer 112; a GaN-based superlattice layer 124 on the first conductive semiconductor layer 112; an active layer 114 on the GaN-based superlattice layer 124; and a second conductive semiconductor layer 116 on the active layer 114, wherein the GaN-based superlattice layer 124 has a bandgap energy level that varies in a direction from the first conductive semiconductor layer 112 to the active layer 114.
Claims19
A light emitting device comprising:
- a first conductive semiconductor layer;
- a GaN-based superlattice layer on the first conductive semiconductor layer;
- an active layer on the GaN-based superlattice layer;
- and
- a second conductive semiconductor layer on the active layer,
- wherein the GaN-based superlattice layer has a bandgap energy level that varies in a direction from the first conductive semiconductor layer to the active layer,
- wherein the GaN-based superlattice layer comprises a first group GaN-based superlattice layer, a second group GaN-based superlattice layer, and a third group GaN-based superlattice layer, and
- wherein the third group GaN-based superlattice layer comprises a third group well and a third group barrier, and a thickness of the third group well is thinner than a thickness of the third group barrier.
Dependencies are inferred from the claim text.