Back to results
US 9,312,428 B2Granted
Light emitting heterostructure with partially relaxed semiconductor layer
AssigneeSensor Electronic Technology, Inc.
InventorsMaxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
Life of this patent
Estimating the term…
Abstract
A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.
Claims21
A heterostructure comprising:
- a light generating structure having a first side and a second side;
- a n-type contact semiconductor layer located on the first side of the light generating structure;
- a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer;
- and
- a dislocation blocking structure located between the partially relaxed sublayer and the light generating structure, wherein the dislocation blocking structure includes a graded composition that changes from a first side of the dislocation blocking structure to a second side thereof.
2 more elements
A device comprising:
- a mesa structure including:
- a light generating structure having a first side and a second side;
- a n-type contact semiconductor layer located on the first side of the light generating structure;
- a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer;
- and
- wherein the at least one of the contact semiconductor layers further includes a dislocation blocking structure located between the partially relaxed sublayer and the light generating structure, and wherein the dislocation blocking structure includes a graded composition that changes from a first side of the dislocation blocking structure to a second side thereof.
3 more elements
A method comprising:
- forming a heterostructure, the heterostructure comprising:
- a light generating structure having a first side and a second side;
- an n-type contact semiconductor layer located on the first side of the light generating structure;
- and
- a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer, wherein the forming includes forming a dislocation blocking structure located between the partially relaxed sublayer and the light generating structure, wherein the dislocation blocking structure includes a graded composition that changes from a first side of the dislocation blocking structure to a second side thereof.
2 more elements
Dependencies are inferred from the claim text.