Semiconductor structure and method for forming the same
OwnerYuan Li, Lei Guoinventors
Life of this patent
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Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a substrate (100); and a plurality of zigzag structures (200) formed on a surface of the substrate (100), in which each zigzag structure (200) has a first long side (202) and a first short side (204), the first long side (202) of one zigzag structure (200) is adjacent to the first short side (204) of another zigzag structure (200) adjacent to the one zigzag structure (200), each first long side (202) defines a first surface (300) of each zigzag structure (200), each first short side (204) defines a second surface (302) of each zigzag structure, and each first surface (300) is a growth surface for a compound semiconductor layer.
Claims8
A semiconductor structure, comprising:
- a substrate;
- and
- a plurality of zigzag structures formed on a surface of the substrate, wherein each zigzag structure has a first long side and a first short side, the first long side of one zigzag structure is adjacent to the first short side of another zigzag structure adjacent to the one zigzag structure, each first long side defines a first surface of each zigzag structure, each first short side defines a second surface of each zigzag structure, and each first surface is a growth surface for a compound semiconductor layer, while each second surface is not a growth surface for the compound semiconductor layer.
A semiconductor structure, comprising:
- a substrate;
- and
- a plurality of zigzag structures formed on a surface of the substrate, wherein each zigzag structure has a first long side and a first short side, the first long side of one zigzag structure is adjacent to the first short side of another zigzag structure adjacent to the one zigzag structure, each first long side defines a first surface of each zigzag structure, each first short side defines a second surface of each zigzag structure, each first surface is a growth surface for a compound semiconductor layer, and a first mask layer is formed on each second surface to prevent the compound semiconductor layer from growing on each second surface.
Dependencies are inferred from the claim text.