Photoelectric conversion element and photoelectric converter
AssigneeSony Corporation
InventorsYasuhiro Yamada, Tsutomu Tanaka, Makoto Takatoku, Ryoichi Ito, Michiru Senda
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Abstract
Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer.
Claims18
A photoelectric conversion element comprising:
- a first semiconductor layer of a first conductivity type provided above a substrate;
- a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer;
- a third semiconductor layer of a third conductivity type provided between the first semiconductor layer and the second semiconductor layer, wherein the third semiconductor layer is lower in electrical conductivity than the first semiconductor layer and the second semiconductor layer;
- a first interlayer insulating film having a contact hole formed therein, wherein within an area corresponding to the contact hole a portion of the third semiconductor layer is in contact with a first portion of the first semiconductor layer, wherein a portion of the first interlayer insulating film adjacent the contact hole is in contact with at least a second portion of the first semiconductor layer and separates the third semiconductor layer from the first semiconductor layer;
- and
- a light-shielding layer provided between the substrate and first semiconductor layer, wherein an area of the light-shielding layer is greater than an area of an opening of the contact hole;
- wherein an insulating film is provided between the first semiconductor layer and the light-shielding layer, and wherein no portion of the first semiconductor layer is in contact with the light-shielding layer.
A photoelectric converter comprising:
- a plurality of pixels, each of the pixels including:
- a photoelectric conversion element, the photoelectric conversion element including:
- a first semiconductor layer of a first conductivity type provided above a substrate;
- a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer;
- a third semiconductor layer of a third conductivity type provided between the first semiconductor layer and the second semiconductor layer and lower in electrical conductivity than the first semiconductor layer and the second semiconductor layer;
- a first interlayer insulating film having a contact hole formed therein, wherein within an area corresponding to contact hole a portion of the third semiconductor layer is in contact with a first portion of the first semiconductor layer, wherein a portion of the first interlayer insulating film adjacent the contact hole is in contact with at least a second portion of the first semiconductor layer and separates the third semiconductor layer from the first semiconductor layer;
- and
- a light-shielding layer provided between the substrate and the first semiconductor layer, wherein an area of the light-shielding layer is greater than an area of an opening of the contact hole;
- wherein an insulating film is provided between the first semiconductor layer and the light-shielding layer, and wherein no portion of the first semiconductor layer is in contact with the light-shielding layer.
Dependencies are inferred from the claim text.