INAS/ALSB/GASB based type-II SL pin detector with P on N and N on P configurations
AssigneeAselsan Elektronik Sanayi Ve Ticaret Anonim Sirketi
InventorsYuksel Ergun, Mustafa Hostut
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Abstract
Novel N-structured In As/Al Sb(Al Ga Sb)/Ga Sb based type-II SL pin detector with p on n and n on p configurations are given to detect light in the Mid Wavelength Infrared Range—MWIR with a cut-off wavelength of 5 μm. Better carrier confinements are performed by placing AlSb layers switching from InAs layers to Ga Sb layers successively in the growth direction throughout the SL pin diode where zero bias detectivity is improved as 6×1013 A/Hz1/2 at a wavelength of 4.2 μm at 79K. RoA value is measured as 1.8×106 Ωcm2 which is better than nBn devices. Dark current density is also obtained in the range of 4-7×10−7 A/cm at zero bias and Vb=0.3V respectively at 79K.
Claims28
A novel N-structured InAs/AlSb/GaSb infrared detector structure to be used as a pixel comprising:
- at least one GaSb buffer layer residing on top of a GaSb substrate;
- at least one lattice matched AlGaAsSb buffer layer residing on top of GaSb buffer layer;
- at least one Be doped p-type GaSb bottom contact layer residing on top of AlGaAsSb buffer layer;
- a plurality of sets of InAs/AlSb/GaSb superlattice layers;
- at least one p-type layer;
- at least one n-type layer;
- and
- at least one active region residing on top of a GaSb bottom contact layer.
Dependencies are inferred from the claim text.