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US 9,312,408 B2Granted
Imager having a reduced dark current through an increased bulk doping level
AssigneeSTMicroelectronics S.r.l.
InventorDidier Dutartre
Life of this patent
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Abstract
The disclosure relates to an image sensor comprising a substrate region in a semiconductor material; an active layer in contact with the substrate region; and a photodiode array formed in the active layer. The substrate region has a doping level such that the resistivity of the substrate region is less than 6 mOhm·cm.
Claims12
An image sensor comprising:
- a substrate region in a semiconductor material having a doping level such that the substrate region has a resistivity that is less than 6 mOhm·cm;
- an active layer in the semiconductor material and in contact with the substrate region;
- an array of photodiodes formed in the active layer;
- deep trench isolators in contact with the substrate region and structured to isolate the photodiodes from each other;
- and
- a semiconductor layer lining the trench isolators, in contact with the substrate region and having a higher doping level than the active layer.
3 more elements
A method of manufacturing an image sensor, the method comprising:
- forming a substrate region in a semiconductor material, the substrate region having a doping level such that the substrate region has a resistivity that is less than 6 mOhm·cm;
- forming an active layer in the semiconductor material and in contact with the substrate region;
- forming an array of photodiodes formed in the active layer;
- forming deep trench isolators in contact with the substrate region and structured to isolate the photodiodes from each other;
- and
- forming a semiconductor layer lining the trench isolators, in contact with the substrate region and having a higher doping level than the active layer.
3 more elements
Dependencies are inferred from the claim text.