Transistor structure, method for manufacturing a transistor structure, force-measuring system

#This application claims priority from German Patent Application No. 102011089261.3, which was filed on Dec. 20, 2011, and is incorporated herein by reference in its entirety.

#Embodiments of the present invention relate to a transistor structure, to a method for manufacturing a transistor structure and to a force-measuring system. In particular, embodiments of the present invention relate to a transistor structure comprising a control electrode and a control electrode portion elastically deflectable under the action of a force, which represents a so-called micromechanical system (MEMS=micro-electromechanical system).

#A miniaturized electromechanical element, such as, for example, a miniaturized microphone or a miniaturized sensor or actor, is an example of a micromechanical system. It is characteristic of MEMS that such electromechanical elements are manufactured directly on a semiconductor substrate on the basis of manufacturing technologies for integrated circuits and that same are integrated directly into electronics, such as, for example, an integrated circuit.

#Embodiments of the invention will be detailed subsequently referring to the appended drawings, in which:

#FIGS. 1a-b show schematic sectional views of a transistor structure in accordance with an embodiment with and without the action of a force;

#FIGS. 2a-b show schematic sectional views of embodiments of the transistor structure comprising different control electrode structures;

#Before embodiments of the present invention will be detailed subsequently referring to the figures, it is pointed out that same elements or elements of the same effect are provided with same reference numerals such that the description of elements of the same reference numerals is mutually applicable or exchangeable.

#A transistor structure and, in particular, its mode of functioning will be detailed below referring to FIGS. 1a and 1b, FIG. 1a showing an unloaded transistor structure 10 (normal state) and FIG. 1b showing the same, but loaded transistor structure 10 (loaded state).

#FIG. 1a shows the transistor structure 10 formed on the semiconductor substrate 12, such as, for example, a wafer of a first doping. The semiconductor substrate 12 is, for example, made of silicon having a monocrystalline atomic lattice structure. A first terminal region 14 and a second terminal regional 16 which exemplarily both comprise a second doping are formed on the semiconductor substrate 12. The first terminal region 14 and the second terminal region 16 are arranged such that a channel region 18 is formed therebetween. The length of the channel region 18 is, for example, 10 μm, wherein generally the channel length may be less than 100 μm or even less than 1 μm (i.e. in a range between 0.01 μm to 1 μm or in a range between 0.1 μm to 100 μm).