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AssigneeRenesas Electronics Corporation
InventorsYoshihiro Hayashi, Naoya Inoue, Kishou Kaneko
Estimating the term…
A semiconductor device including a semiconductor substrate, a first insulating layer formed over said semiconductor substrate, first grooves formed in said first insulating layer, a gate electrode and a first interconnect filled in said first grooves, respectively, a gate insulating film formed over said gate electrode, a semiconductor layer formed over said gate insulating, a second insulating layer formed over said semiconductor layer and said first insulating film, a via formed in said second insulating layer and connected to said semiconductor layer, a second groove formed in said second insulating layer, and a second interconnect filled in said second groove, formed over said via and connected to said via.
A semiconductor device comprising:
The semiconductor device as claimed in 1, further comprising a mask pattern formed over said back-gate electrode.
The semiconductor device as claimed in 1, wherein said semiconductor layer, said gate insulating film, said gate electrode, said trapping film and said back-gate electrode configure a memory element.
A semiconductor device comprising:
Dependencies are inferred from the claim text.