Solution composition for forming oxide semiconductor, and oxide semiconductor and electronic device including the same

A composition for forming an oxide semiconductor, comprising:

• a metal oxide precursor;
• and
• one of a metal thioacetate and a derivative thereof,
• wherein the metal oxide precursor and the one of the metal thioacetate and the derivative thereof include a first metal, the first metal including at least one selected from zinc (Zn), indium (In), magnesium (Mg), molybdenum (Mo), hafnium (Hf), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), yttrium (Y), tin (Sn), gallium (Ga), and titanium (Ti).