FinFET with undoped body bulk
AssigneeBroadcom Corporation
InventorsShom Ponoth, Hemant Vinayak Deshpande
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Abstract
Systems and methods are provide to achieve undoped body bulk silicon based devices, such as field effect transistors (FETS) and Fin Field Effect Transistors (FinFETs). In an embodiment, an epitaxial growth technique is used to form the silicon of an active region of a fin of a FinFET once a punchthrough stop (PTS) layer has been formed. In an embodiment, the epitaxial growth technique according to embodiments of the present disclosure produces a fin with a small notch in the active region.
Claims20
A Fin Field Effect Transistor (FinFET), comprising:
- a source;
- a drain;
- and
- a fin positioned between the source and the drain, wherein the fin comprises:
- a first portion,
- a second portion, wherein the second portion forms a conducting channel between the source and the drain, and wherein the second portion comprises a notch in silicon of the second portion, and
- a punchthrough stop (PTS) positioned between the first portion and the second portion, wherein the notch extends outward relative to the PTS.
A Fin Field Effect Transistor (FinFET), comprising:
- a source;
- a drain;
- and
- a fin positioned between the source and the drain, wherein the fin comprises:
- an inactive region formed from a well region of the FinFET,
- a punchthrough stop (PTS) positioned above the inactive region, and
- an active region positioned above the PTS, wherein the active region forms a conducting channel between the source and the drain, and wherein the active region comprises a notch in silicon of the active region extending outward from the PTS and the inactive region.
A method of forming a Fin Field Effect Transistor (FinFET), the method comprising:
- removing a first portion of a fin of a transistor using a silicon recess procedure to form a remainder of the fin;
- forming a punchthrough stop (PTS) on top of the remainder of the fin;
- and
- forming a second portion of the fin on top of the PTS using an epitaxial growth procedure such that the second portion includes a notch in silicon of the second portion extending outwards from the PTS and the remainder of the fin.
A method of forming a Fin Field Effect Transistor (FinFET), the method comprising:
- removing a first portion of a fin of a transistor using a silicon recess procedure to form a remainder of the fin;
- forming a punchthrough stop (PTS) on top of the remainder of the fin;
- cleaning the PTS;
- and
- forming, after cleaning the PTS, a second portion of the fin on top of the PTS using an epitaxial growth procedure.
Dependencies are inferred from the claim text.