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US 9,312,384 B2Granted
FinFET body contact and method of making same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Hsiung Lo, Jam-Wem Lee, Wun-Jie Lin, Jen-Chou Tseng
Life of this patent
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Abstract
A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate.
Claims20
A semiconductor device comprising:
- a fin extending from a substrate;
- a first gate and a second gate over the fin;
- a first source/drain region in the fin, the first source/drain region being between the first gate and the second gate;
- a first body contact in the fin, the second gate partially overlapping the first body contact;
- and
- a third gate over the fin between the first source/drain region and the first body contact.
3 more elements
A semiconductor device comprising:
- a semiconductor fin raised above a substrate;
- a first active gate over the semiconductor fin;
- a first dummy gate over the semiconductor fin;
- a first source/drain region in the semiconductor fin, the first source/drain region being between the first active gate and the first dummy gate, the first source/drain region being adjacent a first side of the first dummy gate;
- a first body contact in the semiconductor fin, the first body contact being adjacent a second side of the first dummy gate, the second side being opposite the first side, the first dummy gate being aligned with the first body contact;
- and
- a first spacer overlapping the first body contact.
4 more elements
A device comprising:
- a fin extending from a substrate;
- a first gate structure on a top surface and sidewalls of the fin;
- a second gate structure on the top surface and sidewalls of the fin;
- a third gate structure on the top surface and sidewalls of the fin;
- a first source/drain region in the fin, the first source/drain region being between the first gate structure and the second gate structure;
- a second source/drain region in the fin, the second source/drain region being between the first gate structure and the third gate structure;
- a first body contact in the fin, the second gate structure being between the first source/drain region and the first body contact;
- and
- a second body contact in the fin, the third gate structure being between the second source/drain region and the second body contact.
6 more elements
Dependencies are inferred from the claim text.