Manufacturing method of semiconductor apparatus and semiconductor apparatus

A semiconductor apparatus provided with an active portion and a voltage-resistant structure portion that surrounds the active portion on a same semiconductor substrate, comprising:

• a first semiconductor region of a first conductivity;
• a second semiconductor region of a second conductivity selectively provided in a surface layer on an anterior side of the first semiconductor region;
• a third semiconductor region of the first conductivity selectively provided in a surface layer of the second semiconductor region;
• a control electrode that is provided, through a first insulating film, on a surface of the second semiconductor region sandwiched by the first and the third semiconductor regions;
• a second insulating film that covers the control electrode;
• a first electrode that contacts the third semiconductor region and is insulated by the second insulating film from the control electrode;
• a second electrode that is disposed on a posterior side of the first semiconductor region;
• a fifth semiconductor region of the second conductivity at an impurity concentration higher than that of the first semiconductor region and lower than that of the second semiconductor region, the fifth semiconductor region of the second conductivity contacting and surrounding the second semiconductor region, and provided at a depth deeper than that of the second semiconductor region;
• a sixth semiconductor region of the second conductivity at an impurity concentration substantially equivalent to that of the fifth semiconductor region the sixth semiconductor region of the second conductivity contacting and surrounding the fifth semiconductor region, and provided at a depth substantially equivalent to that of the fifth semiconductor region;
• a seventh semiconductor region of the second conductivity at an impurity concentration substantially equivalent to that of the fifth semiconductor region the seventh semiconductor region of the second conductivity contacting and surrounding the sixth semiconductor region, and provided at a depth substantially equivalent to that of the fifth semiconductor region;
• a first local oxide film that is selectively provided in surface layers of the fifth, the sixth, and the seventh semiconductor regions;
• a second local oxide film that is selectively provided in surface layers of the fifth, the sixth, and the seventh semiconductor regions, and contacts the first local oxide film;
• a first conducting layer that is provided through the first local oxide film on the sixth semiconductor region;
• a second conductive layer that is provided through the second local oxide film on the seventh semiconductor region apart from the first conductive layer;
• a third insulating film that is selectively disposed on surfaces of the first and the second conductive layers;
• and
• a third electrode that contacts the second conductive layer,
• wherein the first conducting layer is disposed to have a loop shape,
• wherein the second conductive layer is disposed to have a loop shape that surrounds the first conductive layer, and
• wherein the second conductive layer or an end of the third electrode on an active portion side thereof contacting the second conductive layer is disposed to cover a portion of the sixth semiconductor region.