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US 9,312,374 B2Granted
Integrated power device with III-nitride half bridges
AssigneeInfineon Technologies Americas Corp.
InventorMichael A. Briere
Life of this patent
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Abstract
A semiconductor device that includes a plurality of isolated half-bridges formed in a common semiconductor die.
Claims12
A single semiconductor die having formed therein an integrated power device comprising:
- a power stage including a plurality of parallel-connected half-bridges each including a high side III-nitride power semiconductor device and a low side III-nitride power semiconductor device;
- said high side III-nitride power semiconductor device and said low side III-nitride power semiconductor device, each including source fingers, drain fingers, and gate fingers;
- said source fingers of said high side III-nitride power semiconductor device and said drain fingers of said low side III-nitride power semiconductor device being coupled to one another;
- wherein said integrated power device includes an isolation trench in said single semiconductor die to electrically isolate said high side and low side III-nitride power semiconductor devices.
1 more element
A single semiconductor die having formed therein an integrated power device comprising:
- a first Ill-nitride power semiconductor device and a second III-nitride power semiconductor device, each including source fingers, drain fingers, and gate fingers;
- said source fingers of said first III-nitride power semiconductor device and said drain fingers of said second III-nitride power semiconductor device being coupled to one another;
- a first output of a first half-bridge coupled to a first gate of said first III-nitride power semiconductor device;
- a second output of a second half-bridge coupled to a second gate of said second III-nitride power semiconductor device;
- wherein said integrated power device includes an isolation trench in said single semiconductor die to electrically isolate said first and second III-nitride power semiconductor devices.
2 more elements
Dependencies are inferred from the claim text.