Bipolar junction transistors and methods of fabrication
AssigneeGlobalfoundries Inc.
InventorJagar Singh
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Abstract
A structure, including a bipolar junction transistor and method of fabrication thereof, is provided herein. The bipolar junction transistor includes: a substrate including a substrate region having a first conductivity type; an emitter region over a first portion of the substrate region, the emitter region having a second conductivity type; a collector region over a second portion of the substrate region, the collector region having the second conductivity type; and, a base region overlie structure disposed over, in part, the substrate region. The base region overlie structure separates the emitter region from the collector region and aligns to a base region of the bipolar junction transistor within the substrate region, between the first portion and the second portion of the substrate region.
Claims13
A structure comprising:
- a bipolar junction transistor comprising:
- a substrate comprising a plurality of fins extending above the substrate;
- a plurality of base regions having a first conductivity type, the plurality of base regions comprising center portions of the plurality of fins;
- a plurality of emitter regions having a second conductivity type, the plurality of emitter regions comprising first upper portions of the plurality of fins;
- a plurality of collector regions having the second conductivity type, the plurality of collector regions comprising second upper portions of the plurality of fins;
- and,
- a base region overlie structure disposed over, in part, the plurality of base regions, the base region overlie structure separating the plurality of emitter regions from the plurality of collector regions and aligning to the plurality of base regions.
Dependencies are inferred from the claim text.