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US 9,312,369 B2Granted
Bipolar transistor structure and a method of manufacturing a bipolar transistor structure
AssigneeInfineon Technologies Dresden GmbH
InventorsDmitri Alex Tschumakow, Claus Dahl, Armin Tilke
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Abstract
According to various embodiments, a bipolar transistor structure may include: a substrate; a collector region in the substrate; a base region disposed over the collector region, an emitter region disposed over the base region; a base terminal laterally electrically contacting the base region, wherein the base terminal includes polysilicon.
Claims6
A bipolar transistor structure comprising:
- a substrate;
- a collector region in the substrate;
- a base region disposed over the collector region;
- an emitter region disposed over the base region;
- and
- a base terminal laterally electrically contacting the base region, wherein the base terminal comprises polysilicon;
- and
- a dielectric layer structure disposed between the substrate and the base terminal so that substantially all of a surface of the base terminal facing the substrate is disposed on the dielectric layer structure.
5 more elements
Dependencies are inferred from the claim text.