Graphene device including separated junction contacts and method of manufacturing the same

A transistor comprising:

• a doped substrate;
• a first junction layer coplanar with a second junction layer, the first junction layer and the second junction layer being separated by an insulating trench substantially fill with an insulating material and adjacently disposed on a portion of a top surface of the substrate;
• a planar graphene channel layer in contact with portions of the first junction layer, the second junction layer and the insulating trench;
• a gate insulating layer in contact with the planar graphene channel layer and portions of the first junction layer and the second junction layer;
• a gate in contact with the gate insulating layer;
• and
• a source electrode and a drain electrode on uncovered portions of the first junction layer and the second junction layer, respectively;
• the source electrode and the drain electrode being connected to the planar graphene channel layer via the first junction layer and the second junction layer, respectively and coplanar with the gate.