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US 9,312,358 B2Granted
Partially-blocked well implant to improve diode ideality with SiGe anode
AssigneeInternational Business Machines Corporation
InventorsDechao Guo, Wilfried E. Haensch, Gan Wang, Yanfeng Wang, Xin Wang
Life of this patent
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Abstract
A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an N-well in a selected portion of a p-type substrate adjacent an anode region of the substrate. A p-type doped region is formed in the anode region of the p-type substrate. The p-type doped region and the N-well form a p-n junction.
Claims17
A semiconductor device, comprising:
- a p-type substrate having an N-well formed from a portion of the p-type substrate via ion diffusion, wherein another portion of the p-type substrate blocked from ion diffusion forms an anode region and an interface between the N-well and the anode extends vertically from a top surface of the substrate to a bottom surface of the substrate;
- a cavity formed to a selected depth in the anode region and adjacent the N-well;
- a p-type doped region including p-type doped material deposited in the cavity of the anode adjacent the N-well, wherein the interface between the N-well and the anode provides a boundary of the p-type doped region and a p-n junction of the p-type doped region extends into the N-well and into the anode;
- and
- a gate stack formed on the N-well, the gate stack including a spacer, wherein an outer sidewall of the spacer is substantially aligned with the vertical interface between the N-well and the anode.
2 more elements
A diode, comprising:
- a p-type substrate having an N-well region formed from portion of the p-type substrate during ion doping, wherein a portion of the p-type substrate covered during ion doping forms an anode and an interface between the N-well and the anode extends vertically from a top surface of the substrate to a bottom surface of the substrate;
- a cavity formed to a selected depth in the anode region and adjacent the N-well;
- a p-type doped region including p-type doped material deposited in the cavity of the anode adjacent the N-well, wherein the interface between the N-well and the anode provides a boundary of the p-type doped region and a p-n junction of the p-type doped region extends into the N-well and into the anode;
- and
- a gate stack formed on the N-well, the gate stack including a spacer, wherein an outer sidewall of the spacer is substantially aligned with the vertical interface between the N-well and the anode.
2 more elements
A diode, comprising:
- a p-type substrate having an N-well formed from a portion of the p-type substrate via ion doping and an anode formed from another portion of the p-type substrate by partial blocking the p-type substrate during ion doping, wherein an interface between the N-well and the anode extends vertically from a top surface of the substrate to a bottom surface of the substrate;
- a cavity formed to a selected depth in the anode region and adjacent the N-well;
- an extrinsically p-type doped region including p-type doped material deposited in the cavity of the anode adjacent the N-well, wherein the interface between the N-well and the anode provides a boundary of the p-type doped region and a p-n junction of the p-type doped region extends into the N-well and into the anode;
- and
- a gate stack formed on the N-well, the gate stack including a spacer, wherein an outer sidewall of the spacer is substantially aligned with the vertical interface between the N-well and the anode.
2 more elements
Dependencies are inferred from the claim text.